Focused Ion Beam Scanning Electron Microscopy (FIB-SEM) has become an essential tool for materials science and engineering. It is a technology developed from the simpler form of SEM (Scanning Electron Microscopy). The difference between SEM and FIB is that the beam of electrons that is used in SEM for imagining of the sample surface is replaced by a focused beam of ions.
In FIB, a finely focused beam of ions (usually gallium) can be operated at low beam currents for imaging or at high beam currents to directly affect the surface of a sample, i.e. for site specific sputtering or milling.
A FIB becomes a powerful tool when it is combined with an SEM, where a dual electron beam intersects the ion beam at a 55° just above the sample surface, enabling simultaneous SEM imaging of the surface milled by FIB. Such a configuration in dual beam systems ensures high level of precision in all FIB milling tasks (micro/nanomachining/nanopatterning).
A FIB-SEM can also be used to deposit material via ion/electron beam induced deposition by scanning an area with the beam, when a gas precursor is introduced to the vacuum chamber by using Gas Injection System (GIS). Almost any shape can be deposited, either using the shapes and text provided by the software or importing an image.
GIS provides precursor reactive gas sources to deposit material, to reduce charging effect from both electron and ion beams, to assist in enhanced etching and to protect the sample and reduce curtaining effects on the cross-section during ion beam milling.
The method has been widely adopted in the fields of semiconductor and electronic development, materials science, biology, neuroscience, and more.
Resolution: automatically configures the column to produce the highest resolution for the chosen working conditions
Depth: sets the column up in a mode that enhances depth of focus
Field: optimizes the column to provide an extra large non-distorted field of view
1.2 nm at 30 kV
1.5 nm at 15 kV
2.5 nm at 3 kV
4.5 nm at 1 kV
Tungsten metal deposition
Platinum metal deposition
Insulator (SiOx) deposition
Enhanced etching of diamond and PMMA (H2O)
Enhanced or selective etching of Si, SiO2, Si3N4, W (XeF2)
Chamber: less than 1 x 10-2 Pa
Electron gun: less than 1 x 10-6 Pa
SEM column: less than 1 x 10-2 Pa
FIB gun: less than 5 x 10-6 Pa
Internal Dimensions: 300mm (width) x 330mm (depth)
Door: 280mm (width) x 310mm (height)
X = 130 mm (-50 mm to +80 mm)
Y = 130 mm (-65 mm to +65 mm)
Z = 100 mm
Rotation: 360° continuous
Tilt: -20° to +80° from WD 15mm and for eucentric height of the specimen
Maximum specimen height: 137 mm
SE – Secondary electron detector Everhardt-Thornley type (YAG Crystal)
Retractable BSE - Retractable annular scintillator type (YAG Crystal)
Probe Current Measurements
Touch Control – stops movements when sample touches any part of the chamber
IR TV Camera for the „Chamber View“
EDX - Take off angle: 35° at SEM WD 9 mm (coincidence point)
A fully PC controlled SEM with Schottky field emission cathode in combination with gallium Focused Ion Beam (FIB) column and Gas Injection System (GIS). Sophisticated user-friendly software for SEM/FIB/GIS control and image capturing using Windows™ platform, standard formats of stored images, easy image management, processing and measurements, automatic set up of the system and many other automated operations are characteristic features of the equipment.